Coming from the
field of electronic structure and DFT, Emilio Artacho discusses “On the origin
of
the 2D electron gas at the interface between insulating perovskites”. He
introduces the “polar catastrophe” argument for LaAlO3/SrTiO3 – for an
idealized heterostructure, the charged layers in LaAlO3 up against the neutral
layers in SrTiO3 creates electrostatic boundary conditions which would be
resolved with 0.5 electrons/2D unit cell for one interface, and 0.5 holes for
the other. Assuming idealized
structures, and bulk stoichiometry, the electric field building up, as the
LaAlO3 layers are stacked, drives charge transfer from the surface to the
interface. DFT calculations (on superlattices) show this and correspond quite
well with a simple parallel plate capacitor model.
Emilio wants to
convey 2 key points in his talk:
1) The 0.5
interface charge is not only what you find in the simple ionic limit – rather
it is robust to the realistic generalization (including covalency, etc.). To
show this, he points out that the dipole moment/unit cell is an ill-defined
concept, in that it is dependent on the choice of the origin (pointed out by
Richard Martin in 70’s). A “dipole-free” unit cell can be chosen and thus
projecting all the charge issues to the surface. David Vanderbilt used these
ideas to make the “Berry’s phase connection” (in his case for ferroelectrics)
in the 90’s, such that the boundaries can be treated much as is the case for
topological insulators nowadays. Another analogy is the 1D Haldane chain, in
that the relevant spin degrees of freedom are at the ends of the chain.
Ultimately, the 0.5 charge is the robust consequence of being between two
materials with different topological index.
2) The second
point he emphasizes is that rather than purely dealing with bulk idealized
stoichiometry (discussed above), another relevant degree of freedom is the
stoichiometry – i.e., the 2DEG can be triggered by redox processes. The overall
point is that the electrostatic boundary conditions can be resolved not just by
“mobile electrons”, but also by defect chemistry. Ultimately, both processes
are at play and may interplay.
Final points he
makes include: not all carriers at the interface are mobile; disorder is
expected; and that depending on origin, we may not necessarily have
Mott-Anderson behavior, free carriers moving in a smoothly, weakly disordered
potential.
Discussions
include possible connections to phase separation scenarios previously discussed
in the conference (Grilli et al.).
Blogged by
Harold Hwang
No comments:
Post a Comment